RD02MUS1B_15 Datasheet, PDF (1/8 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon MOSFET Power Transistor

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
DESCRIPTION
OUTLINE DRAWING
RD02MUS1B is a MOS FET type transistor
specifically designed for VHF/UHF RF power
6.0+/-0.15
amplifiers applications.
RD02MUS1B improved a drain surge than
RD02MUS1 by optimizing MOSFET structure.
0.2+/-0.05
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
1
2
FEATURES
High power gain:
Pout>2W, Gp>16dB
@Vdd=7.2V,f=175MHz, 520MHz
High Efficiency: 65%typ. (175MHz)
High Efficiency: 65%typ. (520MHz)
INDEX MARK
(Gate)
3
(0.25)
(0.25)
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
APPLICATION
For output stage of high power amplifiers
In VHF/UHF band mobile radio sets.
Note
( ):center value
UNIT:mm
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RoHS COMPLIANT
RD02MUS1B-101,T112ç is a RoHS compliant products.
RoHS compliance is indicating by the letter “G” after the Lot Marking.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)
RD02MUS1B
MITSUBISHI ELECTRIC
1/8
30 Jul 2007