RD01MUS2_15 Datasheet, PDF (1/6 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon MOSFET Power Transistor

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD01MUS2
RoHS Compliance,
Silicon MOSFET Power Transistor 520MHz,1W
DESCRIPTION
RD01MUS2 is a MOS FET type transistor specifically
designed for VHF/UHF RF amplifiers applications.
This device have an interal monolithic zener diode
from gate to source for ESD protection.
FEATURES
•High power gain:
Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz
•High Efficiency: 65%typ.
•Integrated gate protection diode
APPLICATION
For output stage of high power amplifiers in VHF/UHF
Band mobile radio sets.
OUTLINE DRAWING
TYPE NAME
4.4+/-0.1
1.6+/-0.1

П
1.5+/-0.1
LOT No.
1
2
3
1.5+/-0.1 1.5+/-0.1
0.4+/-0.07 0.5+/-0.07 0.4+/-0.07
0.1 MAX
0.4
+0.03
-0.05
Terminal No.
1 : GATE
2 : SOURSE
3 : DRAIN
UNIT : mm
RoHS COMPLIANT
RD01MUS2-101,T113
is a RoHS compliant products.
This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS RATINGS UNIT
VDSS Drain to source voltage Vgs=0V
30
V
VGSS Gate to source voltage Vds=0V
-5/+10
V
Pch
Channel dissipation
Tc=25°C
3.6
W
Pin
Input Power
Zg=Zl=50Ω
60
mW
ID
Drain Current
-
600
mA
Tch
Channel Temperature
-
150
°C
Tstg
Storage temperature
-
-40 to +125 °C
Rth j-c Thermal resistance
Junction to case 34.5 °C/W
Note 1: Above parameters are guaranteed independently.
%
(
4
SCHEMATIC DRAWING
ELECTRICAL CHARACTERISTICS
(Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
IDSS
IGSS
Vth
Pout
ηd
Zero gate voltage drain current VDS=17V, VGS=0V
Gate to source leak current VGS=10V, VDS=0V
Gate threshold Voltage
VDS=12V, IDS=1mA
Output power
VDD=7.2V, Pin=30mW
Drain efficiency
f=520MHz,Idq=100mA
Note : Above parameters , ratings , limits and conditions are subject to change.
LIMITS
MIN TYP MAX
-
-
50
-
-
1
1
1.8
3
0.8 1.4
-
50
65
-
UNIT
uA
uA
V
W
%
RD01MUS2
MITSUBISHI ELECTRIC
1/6
17 Jan. 2006