RD00HVS1_15 Datasheet, PDF (1/6 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon MOSFET Power Transistor

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD00HVS1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
DESCRIPTION
RD00HVS1 is a MOS FET type transistor specifically
designed for VHF/UHF RF amplifiers applications.
FEATURES
High power gain
Pout>0.5W, Gp>20dB @Vdd=12.5V,f=175MHz
APPLICATION
For output stage of high power amplifiers in VHF/UHF
Band mobile radio sets.
OUTLINE DRAWING


TYPE NAME
4.4+/-0.1
1.6+/-0.1

П
1.5+/-0.1
LOT No.
1
2
3
1.5+/-0.1 1.5+/-0.1
0.4+/-0.07 0.5+/-0.07 0.4+/-0.07
0.1 MAX
0.4
+0.03
-0.05
Terminal No.
1 : GATE
2 : SOURSE
3 : DRAIN
UNIT : mm
RoHS COMPLIANT
RD00HVS1-101,T113
is a RoHS compliant products.
This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
VDSS Drain to source voltage Vgs=0V
VGSS Gate to source voltage Vds=0V
Pch
Channel dissipation
Tc=25°C
Pin
Input Power
Zg=Zl=50Ω
ID
Drain Current
-
Tch
Channel Temperature
-
Tstg
Storage temperature
-
Rth j-c Thermal resistance
Junction to case
Note : Above parameters are guaranteed independently.
RATINGS
30
+/-10
3.1
20
200
150
-40 to +125
40
UNIT
V
V
W
mW
mA
°C
°C
°C/W
ELECTRICAL CHARACTERISTICS
(Tc=25deg.C , UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
IDSS
IGSS
Vth
Pout
ηD
Zero gate voltage drain current VDS=17V, VGS=0V
Gate to source leak current VGS=10V, VDS=0V
Gate threshold Voltage
VDS=12V, IDS=1mA
Output power
VDD=12.5V, Pin=5mW,
Drain efficiency
f=175MHz,Idq=50mA
Note : Above parameters , ratings , limits and conditions are subject to change.
RD00HVS1
MITSUBISHI ELECTRIC
1/6
LIMITS
MIN TYP MAX.
-
-
25
-
-
1
1
2
3
0.5 0.8
-
50
60
-
UNIT
uA
uA
V
W
%
10 Jan 2006