MJE15028 Datasheet, PDF (1/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(8.0A,120-150V,50W)

Product Specification
Silicon NPN Power Transistors
DESCRIPTION
With TO-220C package
Complement to type MJE15029
High transition frequency
DC current gain specified to 4.0 Amperes
h_FE = 40 (Min) @ I_C = 3.0 Adc
h_FE = 20 (Min) @ I_C = 4.0 Adc
APPLICATIONS
Designed for use as high–frequency
drivers in audio amplifiers.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings (Tc=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current (DC)
I_CM
Collector current-Peak
I_B
Base current
P_D
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_a=25
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-C}
Thermal resistance ; junction to case
R_{th j-A}
Thermal resistance , junction to ambient
www.jmnic.com
MJE15028
VALUE
120
120
5
8
16
2
2
50
150
-65~150
UNIT
V
V
V
A
A
A
W
MAX
2.5
62.5
UNIT
/W
/W