BUL6825 Datasheet, PDF (1/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

Product Specification
Silicon Power Transistors
DESCRIPTION
High voltage ,high speed
With TO-220C package
APPLICATIONS
Relay drivers
Inverters
Switching regulators
Deflection circuits
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
emitter
LIMITING VALUES
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current (DC)
I_CM
Collector current-Peak
I_B
Base current
I_BM
Base current-PeaK
P_D
Total power dissipation
P_D
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_a=25
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-C}
Thermal resistance from junction to case
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BUL6825
VALUE
700
400
9
4
8
2
4
2
75
150
-65~150
UNIT
V
V
V
A
A
A
A
W
W
VALUE
1.67
UNIT
/W
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