BUL52B Datasheet, PDF (1/3 Pages) Seme LAB – ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR

Product Specification
Silicon Power Transistors
DESCRIPTION
With TO-220C package
High voltage
Fast switching
High energy rating
APPLICATIONS
Designed for use in
electronic ballast applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
emitter
LIMITING VALUES
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current (DC)
I_CM
Collector current-Peak
I_B
Base current
P_tot
Total power dissipation
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
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BUL52B
VALUE
800
400
10
8
12
4
100
-55~150
UNIT
V
V
V
A
A
A
W
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