BU941_2015 Datasheet, PDF (1/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistor

Product Specification
Silicon NPN Power Transistor
DESCRIPTION
High Voltage
DARLINGTON
APPLICATIONS
High ruggedness electronic ignitions
High voltage ignition coil driver
ABSOLUTE MAXIMUM RATINGS (T_a=25 )
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
500
V
V_CEO
Collector-Emitter Voltage
400
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current- Continuous
I_CM
Collector Current-Peak
I_B
Base Current
15
A
30
A
1
A
I_BM
Base Current-Peak
Collector Power Dissipation
P_C
@T_C=25
T_j
Junction Temperature
5
A
180
W
200
T_stg
Storage Temperature Range
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance, Junction to Case 0.97
/W
www.jmnic.com
BU941