BU2722AF Datasheet, PDF (1/3 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Product Specification
Silicon Power Transistors
DESCRIPTION
With TO-3PFa package
High voltage
High speed switching
APPLICATIONS
For use in horizontal deflection
circuits of high resolution monitors
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current (DC)
I_CP
Collector current (Pulse)
I_B
Base current (DC)
I_BM
Base current (Pulse)
P_tot
Total power dissipation
T_j
Max.operating junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
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BU2722AF
VALUE
1700
825
7.5
10
25
10
14
45
150
-65~150
UNIT
V
V
V
A
A
A
A
W
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