BLF872_2015 Datasheet, PDF (1/16 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – UHF power LDMOS transistor

BLF872
UHF power LDMOS transistor
Rev. 01 — 20 February 2006
Product data sheet
1. Product profile
CAUTION
1.1 General description
A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The transistor can deliver 250 W broadband over the full UHF band from
470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this
device makes it ideal for digital transmitter applications.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
s Typical 2-tone performance at 860 MHz, a drain-source voltage V_DS of 32 V and a
quiescent drain current I_Dq = 2 × 0.9 A:
x Peak envelope power load power P_L(PEP) = 300 W
x Gain G_p = 15 dB
x Drain efficiency η_D = 43 %
x Third order intermodulation distortion IMD3 = −28 dBc
s Typical DVB performance at 858 MHz, a drain-source voltage V_DS of 32 V and a
quiescent drain current I_Dq = 2 × 0.9 A:
x Average output power P_L(AV) = 70 W
x Gain G_p = 15 dB
x Drain efficiency η_D = 30 %
x Third order intermodulation distortion IMD3 = −28 dBc (4.3 MHz from center
frequency)
s Advanced flange material for optimum thermal behavior and reliability
s Excellent ruggedness
s High power gain
s Designed for broadband operation (UHF band)
s Excellent reliability
s Internal input and output matching for high gain and optimum broadband operation
s Source on underside eliminates DC isolators, reducing common-mode inductance
s Easy power control