 English |
|
|
|
|
|
|
|
| BD810_15 Datasheet, PDF (1/1 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Transistors | |||
| |||
|
Power Transistors
BD810
Silicon PNP Transistors
www.jmnic.com
Features
Designed for use in high power audio amplifiers utilizing
complementary or quasi complementary circuits.
With TO-220 package
Absolute Maximum Ratings Tc=25
SYMBOL
VCBO
VCEO
VEBO
IB
IC
PC
Tj
Tstg
PARAMETER
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Base collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
RATING
80
80
5.0
6.0
10
90
150
-55~150
UNIT
V
V
V
A
A
W
BCE
TO-220
Electrical Characteristics Tc=25
SYMBOL
ICBO
IEBO
ICEO
VCBO
V(BR)ceo
VEBO
VCE(sat-1)
PARAMETER
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltages
CONDITIONS
VCB=80V; IE=0
VEB=5.0V; IC=0
IC=0.1A; IB=0
IC=3A; IB=0.3A
VCE(sat-2)
Collector-emitter saturation voltages
hFE-1
hFE-2
hFE-3
VBE(on)1
VBE(on)2
fT
Cob
Forward current transfer ratio
Forward current transfer ratio
Forward current transfer ratio
Base-emitter on voltages
Base-emitter on voltages
Transition frepuency
Output Capacitance
IC=2A; VCE=2V
IC=4A; VCE=2V
IC=4A; VCE=2V
VCE=10V ;IC=1A;f=1MHz
MIN TYPE
MAX
1.0
2.0
UNIT
mA
mA
80
V
1.1
V
30
15
1.6
V
1.5
MHz
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese