BD680_2015 Datasheet, PDF (1/1 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Transistors

Power Transistors
BD680
Silicon PNP Transistors
www.jmnic.com
Features
With TO-126 package
In monolithic Darlington configuration
This transistor is intended for use in medium
power linar and switching applications
Complement to type BD679
Absolute Maximum Ratings Tc=25
SYMBOL
V_CBO
V_CEO
V_CER
V_EB
I_B
I_C
P_D
T_j
T_stg
PARAMETER
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Emitter to base voltage
Base Current
Collector current-Continuous
Total Power Dissipation@TC=25
Junction temperature
Storage temperature
RATING
80
80
5
4
40
150
-55~150
UNIT
V
V
V
A
W
Electrical Characteristics Tc=25
SYMBOL
V_CEO(SUS)
V_CBO
I_CEO
I_CBO
I_EBO
V_EBO
V_CE(sat-1)
V_CE(sat-2)
V_CE(sat-3)
h_FE-1
h_FE-2
V_BE(sat-1)
V_BE(sat-2)
f_T
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Base Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Emitter Cutoff Current
Collector-emitter saturation voltages
Collector-emitter saturation voltages
Collector-emitter saturation voltages
Forward current transfer ratio
Forward current transfer ratio
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
CONDITIONS
I_C=50mA; I_B=0
V_CE=40V; I_B=0
V_CB=80V; I_E=0
V_EB=5V; I_C=0
I_C=1.5A; I_B=30mA
I_C=1.5A; V_CE=3V
ECB
TO-126
MIN
MAX
UNIT
80
V
500
uA
200
uA
2
mA
2.5
V
750