2SD525_15 Datasheet, PDF (1/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors

Product Specification
Silicon NPN Power Transistors
DESCRIPTION
With TO-220C package
Complement to type 2SB595
High breakdown voltage :V_CEO=100V
Low collector saturation volage
: V_CE(sat)=2.0V(Max)
APPLICATIONS
Power amplifier applications
Recommend for 30W high fidelity
audio frequency amplifier output stage
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_E
Emitter current
I_B
Base current
P_C
Collectorl power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
www.jmnic.com
2SD525
VALUE
100
100
5
5
5
0.5
40
150
-55~150
UNIT
V
V
V
A
A
A
W
JMnic