2SD401A_2015 Datasheet, PDF (1/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors

Product Specification
Silicon NPN Power Transistors
DESCRIPTION
With TO-220C package
Complement to type 2SB546A
Collector current I_C=2A
Collector-collector voltage:V_CEO=150V(Min)
APPLICATIONS
For use in general purpose power amplifier,
vertical output application
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
P_D
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
CHARACTERISTICS
R jc
Thermal resistance junction to case
www.jmnic.com
2SD401A
VALUE
200
150
5
2
3
25
150
-55~150
UNIT
V
V
V
A
A
W
MAX
5.0
UNIT
/W
JMnic