2SD2222 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type Darlington(For power amplification)

Product Specification
Silicon NPN Power Transistors
DESCRIPTION
With TO-3PL package
Complement to type 2SB1470
High forward current transfer ratio h_FE
Low saturation voltage V_CE(sat)
DARLINGTON
APPLICATIONS
For power amplification
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
www.jmnic.com
2SD2222
Fig.1 simplified outline (TO-3PL) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
T_a=25
VALUE
160
160
5
8
15
120
3.5
150
-55~150
UNIT
V
V
V
A
A
W
JMnic