2SD1895_15 Datasheet, PDF (1/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Darlington Power Transistors

Product Specification
Silicon NPN Darlington Power Transistors
DESCRIPTION
With TO-3PFa package
Optimum for 90W HiFi output
High foward current transfer ratio h_FE
Low collector-emitter saturation voltage
Complement to type 2SB1255
APPLICATIONS
Power amplification
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CP
Collector current-peak
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
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2SD1895
VALUE
160
140
5
15
8
100
3
150
-55~150
UNIT
V
V
V
A
A
W
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