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| 2SD1297_15 Datasheet, PDF (1/1 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Transistors | |||
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Product Specification
2SD1297
Silicon NPN Transistors
www.jmnic.com
Features
Darlington
With TO-3PFa package
Low speed power switching applications
Absolute Maximum Ratings Tc=25
SYMBOL
VCBO
VCEO
VEBO
IC
PD
Tj
Tstg
PARAMETER
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current-Continuous
Total Power Dissipation@TC=25
Junction temperature
Storage temperature
RATING
150
100
5
25
100
150
-55~150
UNIT
V
V
V
A
W
Electrical Characteristics Tc=25
SYMBOL
VCEO(SUS)
VCBO
ICEO
ICBO
IEBO
VEBO
VCE(sat-1)
VCE(sat-2)
hFE-1
hFE-2
VBE(sat)1
VBE(sat)2
fT
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Base Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Emitter-Base Voltage
Collector-emitter saturation voltages
Collector-emitter saturation voltages
Forward current transfer ratio
Forward current transfer ratio
Base-emitter saturation voltages
Base-emitter saturation voltages
Transition frequency
CONDITIONS
IC=100mA; IB=0
VCB=100V; IE=0
VEB=5V; IC=0
IC=15A; IB=0.03A
IC=15A; VCE=2V
IC=15A; IB=0.03A
BCE
TO-3PFa
MIN
MAX
UNIT
100
V
10
uA
5
mA
1.5
V
1000 30000
2.2
V
JMnic
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