2SD1276 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type Darlington(For power amplification)

Product Specification
Silicon NPN Power Transistors
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2SD1276 2SD1276A
DESCRIPTION
With TO-220Fa package
Complement to type 2SB950 and 2SB950A
High forward current transfer ratio h_FE
High-speed switching
APPLICATIONS
For power amplification
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
ABSOLUTE MAXIMUM RATINGS AT Tc=25
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
2SD1276
2SD1276A
V_CEO
Collector-emitter voltage
2SD1276
2SD1276A
V_EBO
Emitter-base voltage
I_C
Collector current (DC)
I_CM
Collector current-Peak
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
T_a=25
VALUE
60
80
60
80
5
4
8
40
2
150
-55~150
UNIT
V
V
V
A
A
W
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