2SC867_2014 Datasheet, PDF (1/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors

JMnic
Silicon NPN Power Transistors
Product Specification
2SC867
DESCRIPTION
With TO-66 package
High collector-base breakdown voltage
:V_CBO=400V(min)
APPLICATIONS
For high voltage and switching applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
P_D
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
VALUE
400
150
5
1
2
23
150
-55~150
UNIT
V
V
V
A
A
W