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2SC4278_2015 Datasheet, PDF (1/1 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Transistors
Power Transistors
2SC4278
Silicon NPN Transistors
Features
With TO-247 package
Complement to type 2SA1633
Absolute Maximum Ratings Tc=25
SYMBOL
VCBO
VCEO
VCER
VEB
IB
IC
PD
Tj
Tstg
PARAMETER
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Emitter to base voltage
Base Current
Collector current-Continuous
Total Power Dissipation@TC=25
Derate above 25
Junction temperature
Storage temperature
RATING
150
150
UNIT
V
V
5
V
10
A
100
W
W/
150
-65~150
Electrical Characteristics Tc=25
SYMBOL
VCEO(SUS)
VCBO
ICEO
ICBO
IEBO
VEBO
VCE(sat-1)
VCE(sat-2)
VCE(sat-3)
VCE(sat-4)
hFE-1
hFE-2
VBE(sat)
fT
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Base Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Emitter Cutoff Current
Collector-emitter saturation voltages
Collector-emitter saturation voltages
Collector-emitter saturation voltages
Collector-emitter saturation voltages
Forward current transfer ratio
Forward current transfer ratio
Base-emitter Saturation voltages
Current Gain-Bandwidth Product
CONDITIONS
IC=30mA; IB=0
IC=1mA; IE=0
VCE=150V; IB=0
VCB=150V; IE=0
IE=5mA; IC=0
IC=5A; IB=0.5A
IC=1A; VCE=5V
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BCE
TO-247
MIN
MAX
UNIT
150
V
150
V
500
uA
100
uA
5
V
2.0
V
60
320