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| 2SC3834_2014 Datasheet, PDF (1/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistor | |||
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Product Specification
Silicon NPN Power Transistor
DESCRIPTION
Low Collector Saturation Voltage
: VCE(sat)= 0.5V(Max)@ IC=3A
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V (Min)
Good Linearity of hFE
APPLICATIONS
Designed for use in humidifier , DC/DC converter and
general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25 )
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Pulse
14
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
3
A
50
W
150
Tstg
Storage Temperature Range
-55~150
www.jmnic.com
2SC3834
1
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