2SC3710 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (HIGH CURRENT SWITCHING APPLICATIONS)

Power Transistors
2SC3710
Silicon NPN Transistors
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Features
With TO-220Fa package
Complement to type 2SA1452
Hihg current switching applications
Absolute Maximum Ratings Tc=25
SYMBOL
V_CBO
V_CEO
V_EBO
I_B
I_C
P_C
T_j
T_stg
PARAMETER
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
RATING
80
80
6
2
12
30
150
-55~150
UNIT
V
V
V
A
A
W
Electrical Characteristics Tc=25
SYMBOL
I_CBO
I_EBO
V_CBO
V_CEO
V_EBO
V_CE(sat-1)
V_CE(sat-2)
h_FE-1
h_FE-2
V_BE(sat-1)
V_BE(sat-2)
f_T
C_ob
PARAMETER
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltages
Collector-emitter saturation voltages
Forward current transfer ratio
Forward current transfer ratio
Base-emitter saturation voltages
Base-emitter saturation voltages
Transition frepuency
Collector Out put Capacitance
CONDITIONS
V_CB=80V; I_E=0
V_EB=6V; I_C=0
I_C=50mA; I_B=0
I_C=6A; I_B=0.3A
I_C=1A; V_CE=1V
I_C=6A; V_CE=1V
I_C=6A; I_B=0.3A
I_C=1A; V_CE=5V
V_CB=10V;f=1MHz
h_FE-1 Classifications
O
70-140
Y
120-240
BCE
TO-220Fa
MIN Typ. MAX UNIT
10
uA
10
uA
80
V
0.4
V
70
240
40
1.2
V
80
MHz
220
pF
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