2SC3686_15 Datasheet, PDF (1/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors

Product Specification
Silicon NPN Power Transistors
ESCRIPTION
High breakdown voltage
High reliability (adoption of HVP process).
Fast speed
Adoption of MBIT process.
With TO-3PN package
APPLICATIONS
Ultrahigh-definition color display horizontal
deflection output.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
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2SC3686
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CP
Collector current-pulse
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
VALUE
1500
800
6
7
16
120
150
-55~150
UNIT
V
V
V
A
A
W
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