2SC3507_15 Datasheet, PDF (1/4 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors

JMnic
Silicon NPN Power Transistors
Product Specification
2SC3507
DESCRIPTION
With TO-3PFa package
High-speed switching
High collector-base voltage V_CBO
Satisfactory linearity of forward
current transfer ratio h_FE
APPLICATIONS
For high-speed switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
I_B
Base current
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
T_a=25
VALUE
1000
800
7
5
10
3
80
3
150
-55~150
UNIT
V
V
V
A
A
A
W