2SC3298 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – SILICON NPN EPITAXIAL TYPE

Product Specification
Silicon Power Transistors
DESCRIPTION
With TO-220Fa package
Complement to type
2SA1306,2SA1306A,2SA1306B
APPLICATIONS
Power amplifier applications
Driver stage amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
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2SC3298 2SC3298A 2SC3298B
ABSOLUTE MAXIMUM RATINGS AT Tc=25
SYMBOL
PARAMETER
2SC3298
V_CBO
Collector-base voltage
2SC3298A
2SC3298B
2SC3298
V_CEO
Collector-emitter voltage
2SC3298A
2SC3298B
V_EBO
Emitter-base voltage
I_C
Collector current
I_B
Base current
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
VALUE
160
180
200
160
180
200
5
1.5
0.15
20
150
-55~150
UNIT
V
V
V
A
A
W
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