2SC2590_2014 Datasheet, PDF (1/4 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors

JMnic
Silicon NPN Power Transistors
DESCRIPTION
With TO-126 package
Complement to type 2SA1110
Excellent current I_C characteristics of forward
current transfer ratio h_FE vs. collector
High transition frequency f_T
Optimum for the driver stage of a
40 W to 60 W output amplifier
APPLICATIONS
For low-frequency power amplification
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Product Specification
2SC2590
Absolute Maximun Ratings (Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current (DC)
I_CM
Collector current-Peak
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
Note) *: Without heat sink
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
VALUE
120
120
5
0.5
1.0
1.2*
150
-55~150
UNIT
V
V
V
A
A
W