2SC2166 Datasheet, PDF (1/2 Pages) Mitsubishi Electric Semiconductor – NPN EPITAXIAL PLANAR TYPE(RF POWER TRANSISTOR)

Product Specification
Silicon NPN Power Transistor
DESCRIPTION
High Power Gain-
: G_pe 13.8dB @f= 27MHz, P_O= 6W; V_CC= 12V
High Reliability
APPLICATIONS
Designed for 3 to 4 watts output power amplifiers in HF band
mobile radio applications.
ABSOLUTE MAXIMUM RATINGS (T_a=25 )
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
45
V
V_CER
Collector-Emitter Voltage R_BE= 10
45
V
V_EBO Emitter-Base Voltage
4
V
I_C
Collector Current
Collector Power Dissipation
@T_C=25
P_C
Collector Power Dissipation
@T_a=25
T_j
Junction Temperature
4
A
12.5
W
1.5
150
T_stg
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-a} Thermal Resistance,Junction to Ambient 83
/W
R_{th j-c} Thermal Resistance,Junction to Case
10
/W
Website www.jmnic.com
2SC2166