2SC1942 Datasheet, PDF (1/3 Pages) Hitachi Semiconductor – HIGH VOLTAGE POWER SWITCHING TV HORIZONTAL DEFLECTION OUTPUT

JMnic
Silicon NPN Power Transistors
Product Specification
2SC1942
DESCRIPTION
With TO-3 package
High breakdown voltage
High speed switching
APPLICATIONS
For TV horizontal output applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
P_T
Total power dissipation
T_C=25
T_j
Junction temperature
T_stg
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-C}
Thermal resistance from junction to case
VALUE
1500
800
6
3
50
150
-65~150
UNIT
V
V
V
A
W
VALUE
2.5
UNIT
/W