2SC1061 Datasheet, PDF (1/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(3.0A,50V,25W)

Product Specification
Silicon NPN Power Transistors
DESCRIPTION
With TO-220 package
Low saturation voltage
Complement to type 2SA671
Note: type 2SC1060 with short pin
APPLICATIONS
For use in low frequency power
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current (DC)
I_CM
Collector current-peak
I_B
Base current (DC)
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
Thermal resistance from junction to case
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2SC1061
VALUE
50
50
4
3
8
0.5
25
150
-55~150
UNIT
V
V
V
A
A
A
W
MAX
5.0
UNIT
/W