2SB903_2014 Datasheet, PDF (1/4 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Power Transistors

JMnic
Silicon PNP Power Transistors
DESCRIPTION
With TO-220 package
Low collector saturation voltage
Large current capacity.
Complement to type 2SD1212
APPLICATIONS
Suitable for relay drivers, high-speed
inverters,converters, and other genral
large current switching applications.
High-speed switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Product Specification
2SB903
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_CM
Collector current-peak
P_C
Collector power dissipation
T_C=25
T_j
Junction temperature
T_stg
Storage temperature
VALUE
-60
-30
-6
-12
-20
1.75
35
150
-55~150
UNIT
V
V
V
A
A
W