2SB886_2014 Datasheet, PDF (1/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Power Transistors

JMnic
Silicon PNP Power Transistors
DESCRIPTION
With TO-220C package
Complement to type 2SD1196
DARLINGTON
High DC current gain
High current capacity and wide ASO
Low saturation voltage
APPLICATIONS
Motor drivers, printer
Hammer drivers
Relay drivers,
Voltage regulator control.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current (DC)
I_CM
Collector current-Peak
P_C
Collector dissipation
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
T_j
Junction temperature
T_stg
Storage temperature
Product Specification
2SB886
VALUE
-110
-100
-6
-8
-12
40
1.75
150
-50~150
UNIT
V
V
V
A
A
W