2SB885_2014 Datasheet, PDF (1/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Power Transistor

JMnic
Silicon PNP Power Transistor
DESCRIPTION
With TO-220C package
DARLINGTON
High DC durrent gain
Low collector saturation voltage
Complement to type 2SD1195
APPLICATIONS
For motor drivers,printer hammer
drivers,relay drivers,voltage regulator
control applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current-DC
I_CM
Collector current-Pulse
T_C=25
P_C
Collector power dissipation
T_a=25
T_j
Junction temperature
T_stg
Storage temperature
Product Specification
2SB885
VALUE
-110
-100
-6
-5
-8
35
1.75
150
-55~150
UNIT
V
V
V
A
A
W