2SB829_15 Datasheet, PDF (1/4 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Power Transistors

JMnic
Silicon PNP Power Transistors
Product Specification
2SB829
DESCRIPTION
With TO-3PN package
Complement to type 2SD1065
Wide area of safe operation
Low collector saturation voltage :
V_CE(sat) =–0.5V max.
APPLICATIONS
Relay drivers,
High-speed inverters,converters
General high-current switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current (DC)
I_CP
Collector current (Pulse)
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
VALUE
-60
-50
-6
-15
-20
90
150
-55~150
UNIT
V
V
V
A
A
W