2SB826_2014 Datasheet, PDF (1/4 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Power Transistors

JMnic
Silicon PNP Power Transistors
Product Specification
2SB826
DESCRIPTION
With TO-220 package
Low collector saturation voltage
Complement to type 2SD1062
Wide area of safe operation
APPLICATIONS
Relay drivers,
High-speed inverters, converters
General high-current switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current (DC)
I_CP
Collector current (Pulse)
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
VALUE
-60
-50
-6
-12
-15
40
150
-55~150
UNIT
V
V
V
A
A
W