2SB754_2014 Datasheet, PDF (1/4 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Power Transistors

Product Specification
Silicon PNP Power Transistors
DESCRIPTION
With TO-3P(I) package
Complement to type 2SD844
High collector current :I_C=-7A
Low collector saturation voltage
High power dissipation
APPLICATIONS
High current switching applications
Power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_E
Emitter current
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_a=25
T_C=25
www.jmnic.com
2SB754
VALUE
-50
-50
-5
-7
7
2.5
60
150
-55~150
UNIT
V
V
V
A
A
W