2SB697_15 Datasheet, PDF (1/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Power Transistors

JMnic
Silicon PNP Power Transistors
Product Specification
2SB697 2SB697K
DESCRIPTION
With TO-3 package
Complement to type 2SD733/733K
High power dissipation
APPLICATIONS
Power amplifier applications
Recommended for high-power high-fidelity
audio frequency amplifier output stage
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
Fig.1 simplified outline (TO-3) and symbol
3
Collector
导体 _{Absolute maximum ratings(Ta= )}
固I电NC半HANGE _{SEMICONDUCTOR SYMBOL}
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
2SB697
2SB697K
Open emitter
2SB697
VALUE
-160
-180
-140
UNIT
V
V_CEO
Collector-emitter voltage
Open base
V
2SB697K
-160
V_EBO
Emitter-base voltage
Open collector
-6
V
I_C
Collector current
-12
A
I_CM
Collector current-peak
-20
A
P_C
Collector power dissipation
T_C=25
100
W
T_j
Junction temperature
150
T_stg
Storage temperature
-40~150