2SB676_2014 Datasheet, PDF (1/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Power Transistors

JMnic
Silicon PNP Power Transistors
Product Specification
2SB676
DESCRIPTION
With TO-220C package
High DC Current Gain
: h_FE=2000 @V_CE=-2V, I_C=-1A (Min.)
DARLINGTON
APPLICATIONS
For switching applications
Hammer drive, pulse motor drive applications
Power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector; connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current-DC
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
VALUE
-100
-80
-5
-4
30
150
-55~150
UNIT
V
V
V
A
W