2SB649 Datasheet, PDF (1/4 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

JMnic
Silicon PNP Power Transistors
Product Specification
2SB649 2SB649A
DESCRIPTION
With TO-126 package
Complement to type 2SD669/669A
High breakdown voltage V_CEO:-120/-160V
High current -1.5A
Low saturation voltage,excellent h_FE linearity
APPLICATIONS
For low-frequency power
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
2SB649
2SB649A
Open emitter
V_CEO
Collector-emitter voltage
2SB649
2SB649A
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current (DC)
I_CM
Collector current-Peak
P_D
Total power dissipation
T_a=25
T_C=25
T_j
Junction temperature
T_stg
Storage temperature
VALUE
-180
-180
-120
-160
-5
-1.5
-3
1
20
150
-55~150
UNIT
V
V
V
A
A
W