2SB632_15 Datasheet, PDF (1/4 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Power Transistors

JMnic
Silicon PNP Power Transistors
Product Specification
2SB632 2SB632K
DESCRIPTION
With TO-126 package
Complement to type 2SD612/612K
High collector dissipation
Wide ASO(Safe Operating Area)
APPLICATIONS
25V/35V, 2A low-frequency
power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
2SB632
2SB632K
Open emitter
V_CEO
Collector-emitter voltage
2SB632
2SB632K
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current (DC)
I_CM
Collector current-Peak
P_D
Total power dissipation
T_j
Junction temperature
T_a=25
T_C=25
T_stg
Storage temperature
VALUE
-25
-35
-25
-35
-5
-2
-3
1
10
150
-55~150
UNIT
V
V
V
A
A
W