2SB631 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – 100V/120V, 1A Low-Frequency Power Amp Applications

JMnic
Silicon PNP Power Transistors
Product Specification
2SB631 2SB631K
DESCRIPTION
With TO-126 package
Complement to type 2SD600/K
High breakdown voltage V_CEO:-100/-120V
High current: -1A
Low saturation voltage,excellent h_FE linearity
APPLICATIONS
For low-frequency power
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
2SB631
2SB631K
Open emitter
V_CEO
Collector-emitter voltage
2SB631
2SB631K
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current (DC)
I_CM
Collector current-Peak
P_D
Total power dissipation
T_j
Junction temperature
T_a=25
T_C=25
T_stg
Storage temperature
VALUE
-100
-120
-100
-120
-5
-1
-2
1
8
150
-55~150
UNIT
V
V
V
A
A
W