2SB601 Datasheet, PDF (1/3 Pages) NEC – PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

JMnic
Silicon PNP Power Transistors
DESCRIPTION
With TO-220C package
DARLINGTON
High DC current gain
Low collector saturation voltage
APPLICATIONS
For low-frequency power amplifier and
low-speed switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current-DC
I_CM
Collector current-Pulse
I_B
Base current-DC
P_T
Total power dissipation
T_j
Junction temperature
T_C=25
T_a=25
T_stg
Storage temperature
Product Specification
2SB601
VALUE
-100
-100
-7
-5
-8
-0.5
30
1.5
150
-55~150
UNIT
V
V
V
A
A
A
W