2SB595_15 Datasheet, PDF (1/4 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Power Transistors

JMnic
Silicon PNP Power Transistors
Product Specification
2SB595
DESCRIPTION
With TO-220C package
Complement to type 2SD525
High breakdown voltage :V_CEO=-100V
Low collector saturation volage
: V_CE(sat)=-2.0V(Max)
APPLICATIONS
Power amplifier applications
Recommend for 30W high fidelity
audio frequency amplifier output stage
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_E
Emitter current
I_B
Base current
P_C
Collectorl power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
VALUE
-100
-100
-5
-5
-5
-4
40
150
-55~150
UNIT
V
V
V
A
A
A
W