2SB514_2014 Datasheet, PDF (1/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Power Transistors

JMnic
Silicon PNP Power Transistors
Product Specification
2SB514
DESCRIPTION
With TO-220C package
Complement to type 2SD330
Low collector saturation voltage
APPLICATIONS
Suited for use in output stage of 10W
AF power amplifier
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current (DC)
I_CM
Collector current-Peak
P_C
Collector dissipation
T_a=25
T_C=25
T_j
Junction temperature
T_stg
Storage temperature
VALUE
-50
-50
-5
-2
-5
1.75
20
150
-50~150
UNIT
V
V
V
A
A
W