2SB507_15 Datasheet, PDF (1/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Power Transistors

JMnic
Silicon PNP Power Transistors
Product Specification
2SB507
DESCRIPTION
With TO-220C package
Complement to type 2SD313
Low collector saturation voltage
APPLICATIONS
Designed for the output stage of 15W
to 25W AF power amplifier
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current (DC)
I_CM
Collector current-Peak
I_B
Base current
P_C
Collector dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
VALUE
-60
-60
-5
-3
-6
-1
30
150
-50~150
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
CHARACTERISTICS
R jc
Thermal resistance junction to case
MAX
4.16
UNIT
/W