2SB1642 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS)

JMnic
Silicon PNP Power Transistors
Product Specification
2SB1642
DESCRIPTION
With TO-220F package
Low collector saturation voltage:
V_CE(SAT)=-1.5V(Max) at I_C=-2.5A,I_B=-0.25A
Collector power dissipation:
P_C=25W(T_C=25 )
APPLICATIONS
Audio frequency power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_B
Base current
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_a=25
T_C=25
VALUE
-60
-60
-7
-4
-1
2.0
25
150
-55~150
UNIT
V
V
V
A
A
W