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| 2SB1375 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER) | |||
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JMnic
Silicon PNP Power Transistors
Product Specification
2SB1375
DESCRIPTION
With TO-220F package
Complement to type 2SD2012
Low collector saturation voltage:
VCE(SAT)=-1.5V(Max) at IC=-2A,IB=-0.2A
Collector power dissipation:
PC=25W(TC=25 )
APPLICATIONS
Audio frequency power amplifier
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
IB
Base current
PC
Collector dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
-60
-60
-7
-3
-0.5
2.0
25
150
-55~150
UNIT
V
V
V
A
A
W
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