2SB1255_2014 Datasheet, PDF (1/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Darlington Power Transistors

JMnic
Silicon PNP Darlington Power Transistors
Product Specification
2SB1255
DESCRIPTION
With TO-3PFa package
Optimum for 90W Hi-Fi output
High foward current transfer ratio h_FE
Low collector-emitter saturation voltage
Complement to type 2SD1895
APPLICATIONS
Power amplification
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CP
Collector current-peak
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
VALUE
-160
-140
-8
-15
-12
100
3
150
-55~150
UNIT
V
V
V
A
A
W