2SB1151_2014 Datasheet, PDF (1/4 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Power Transistors

JMnic
Silicon PNP Power Transistors
DESCRIPTION
With TO-126 package
Complement to type 2SD1691
Low saturation voltage
Large current
High total power dissipation:P_T=1.3W
Large current capability and wide SOA
APPLICATIONS
DC-DC converter
Driver of solenoid or motor
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Product Specification
2SB1151
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current (DC)
I_CM
Collector current-Peak
I_B
Base current
P_D
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_a=25
T_C=25
VALUE
-60
-60
-7
-5
-8
-1
1.3
20
150
-55~150
UNIT
V
V
V
A
A
A
W