2SB1149_15 Datasheet, PDF (1/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Power Transistors

JMnic
Silicon PNP Power Transistors
DESCRIPTION
With TO-126 package
DARLINGTON
High DC current gain
Low collector saturation voltage
APPLICATIONS
For use in operating from IC without
predriver ,such as hammer driver
PINNING(See Fig.2)
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current (DC)
I_CM
Collector current-peak
P_D
Total power dissipation
T_a=25
T_C=25
T_j
Junction temperature
T_stg
Storage temperature
Product Specification
2SB1149
VALUE
-100
-100
-8
-3.0
-5.0
1.3
15
150
-55~150
UNIT
V
V
V
A
A
W