2SB1106_2014 Datasheet, PDF (1/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Power Transistors

JMnic
Silicon PNP Power Transistors
DESCRIPTION
With TO-220C package
DARLINGTON
High DC durrent gain
Complement to type 2SD1606
APPLICATIONS
Designed for use in low frequency
power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current-DC
P_C
Collector power dissipation
T_C=25
T_j
Junction temperature
T_stg
Storage temperature
Product Specification
2SB1106
VALUE
-120
-120
-7
-6
40
150
-55~150
UNIT
V
V
V
A
W