2SB1055_2014 Datasheet, PDF (1/4 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Power Transistors

JMnic
Silicon PNP Power Transistors
DESCRIPTION
With TO-3PFa package
Complement to type 2SD1486
High f_T
Satisfactory linearity of h_FE
Wide area of safe operation
APPLICATIONS
For high power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Product Specification
2SB1055
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CP
Collector current-peak
P_C
Collector power dissipation
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
T_j
Junction temperature
T_stg
Storage temperature
VALUE
-120
-120
-5
-6
-10
70
3
150
-55~150
UNIT
V
V
V
A
A
W